^e.ml-dona\jictoi lptoaucti, one.. 20 stern ave. springfield, new jersey 07081 u.s.a. swtchmode series npn silicon power transistors these devices are designed for high-voltage,high-speed .power switching inductive circuits where fall time is critical.they are particu- larly, suited for 115 and 220 volt line operated switchmode appli- cations such as: * switching regulators * pwm inverters and motor controls * solenoid and relay drivers * deflection circuits specification features- high temperature performance specified for: reversed biased soa with inductive loads switching times with inductive loads saturation voltages, leakage currents. maximum ratings thermal characteristics telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 characteristic collector-emitter voltage collector-emitter voltage collector-base voltage collector current - continuous -peak base current - continuous emitter current -continuous -peak total power dissipationetc=25c derate above 25c operating and storage junction temperature range symbol vceo(?us) vcev vebo 'c 'cm ib ie 'em pd tj |t8to 2N6542 300 650 2n6643 400 850 8.0 5.0 10 5 10 20 100 0.57 - 65 to +200 unit v v v a a a w w/c c characteristic thermal resistance junction to case symbol rejc max 1.75 unit c/w 125 i |100 i ^ 1 50 | 25 c figure -1 power derating x- x \x \ <. ) 25 50 75 1oo 125 150 175 200 tc , temperatvjre('c) npn 2N6542 2n6543 5 ampere npn silicon power transistors 300 - 400 volts 100 watts to-3 c! b ?! - ja x, ' u h 1 ~\: i 'x / a j 1 1 4 < ^ 'k ' i ? e pin 1.base 2.emttter collector(case) dim a b c d e f g h i j k millimeters min 38.75 19.28 7,96 11.18 25.20 0.92 1.38 2990 16.64 3.88 10.67 max 3996 22.23 9.28 12.19 26.67 1 09 1.62 3040 17.30 4.36 11.18 qualify semi-conductors
2N6542, 2n6543 npn electrical characteristics ( tc = 25c unless otherwise noted ) characteristic symbol min max unit off characteristics collector - emitter sustaining voltage (1) ( l = 100 ma, l = 0 ) 2N6542 2n6543 collector cutoff current ( vcbv * 650 v, v ? 1 .5 v ) 2N6542 ( vcev = 850 v, v ? 1 .5 v ) 2n6543 { vcev = 650 v, v = 1 .5 v, tc = 100c ) 2N6542 { vcbv = 850 v, vbe(0(n = 1 .5 v, te = 1 00c ) 2n6543 emitter cutoff current (veb = 8.0v,ic = 0) vceo(?is) 'cev 'ebo 300 400 0.5 0.5 3.0 3.0 1.0 v ma ma on characteristics(i) dc current gain j(lc= 1.5 a, vce = 2.0v) ( lc = 3.0 a, vce = 2.0 v ) collector-emitter saturation voltage ( ic = 3.0 a, ib = 0.6 a ) (ic-5.0a, ib =1.0 a) . base-emitter saturation voltage ( ic = 3.0 a, !b = 0.6 a ) hfe v? vw 12 7.0 60 35 1.0 5.0 1.4 v v dynamic characteristics current gain bandwidth (2) ( lc = 200 ma, vc6 = 10 v, f =1.0 mhz ) ft 6.0 35 mhz switching characteristics i delay time [rise time storage time fall time vec = 250 v ic = 3.0a ib1=-ib2 = 0.6a t =0.1 ms duty cycle 2.0% '<. *r *. *f 0.05 0.7 4.0 0.8 us us us us (1) pulse test: pulse width = 300 us , duty cycle s 2.0% (2)ft= h,. f,9m
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